收藏本站
ZXMN6A11DN8
60V SO8 Dual N-channel enhancement mode MOSFET
Summary
V (BR)DSS
60
R DS(on) ( )
0.120 @ V GS = 10V
0.180 @ V GS = 4.5V
I D (A)
3.2
2.6
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
?
Low on-resistance
?
Fast switching speed
D1
D2
?
?
?
Low threshold
Low gate drive
Low profile SOIC package
G1
S1
G2
S2
Applications
?
DC-DC converters
?
?
Power management functions
Motor control
S1
G1
D1
D1
Ordering information
S2
D2
Device
ZXMN6A11DN8TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
500
G2
Pin out - top view
D2
Device marking
ZXMN
6A11D
Issue 3 - September 2006
? Zetex Semiconductors plc 2006
1
www.zetex.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ZXMN6A11ZTA MOSFET N-CH 60V 2.4A SOT-89
ZXMN6A25DN8TA MOSFET 2N-CH 60V 4.6A 8-SOIC
ZXMN6A25G MOSFET N-CHAN 60V SOT223
ZXMN6A25K MOSFET N-CHAN 60V DPAK
ZXMN7A11GTA MOSFET N-CH 70V 3.8A SOT-223
ZXMN7A11KTC MOSFET N-CH 70V 6.1A D-PAK
ZXMP10A13FTA MOSFET P-CH 100V 600MA SOT23-3
ZXMP10A16KTC MOSFET P-CH 100V DPAK
相关代理商/技术参数
ZXMN6A11G 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 60V, 4.4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:60V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; No. of Pins:4;RoHS Compliant: Yes
ZXMN6A11G 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223
ZXMN6A11G_06 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SOT223 N-channel enhancement mode MOSFET
ZXMN6A11GFTA 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN6A11GFTC 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN6A11GTA 功能描述:MOSFET 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN6A11GTC 功能描述:MOSFET 60V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN6A11Z 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET